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GN2K Schematic ( PDF Datasheet ) - EIC discrete Semiconductors

Teilenummer GN2K
Beschreibung GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
Hersteller EIC discrete Semiconductors
Logo EIC discrete Semiconductors Logo 




Gesamt 2 Seiten
GN2K Datasheet, Funktion
GN2A - GN2M
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMB (DO-214AA)
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
1.1 ±0.3
2.0 ±0.1
3.6 ±0.15
2.3 ±0.2
0.22 ±0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.093 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL GN2A GN2B GN2D GN2G GN2J GN2K GN2M UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
VRRM 50 100 200 400 600 800 1000 Volts
VRMS
35
70 140 280 420 560 700 Volts
VDC 50 100 200 400 600 800 1000 Volts
IF(AV)
2.0 Amps.
IFSM
VF
IR
IR(H)
CJ
TJ
TSTG
50
1.0
5.0
50
75
- 65 to + 150
- 65 to + 150
Amps.
Volts
µA
µA
pF
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
UPDATE : MAY 27, 1998





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