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Teilenummer | GN01096B |
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Beschreibung | GaAs IC(with built-in ferroelectric) | |
Hersteller | Panasonic Semiconductor | |
Logo | ||
Gesamt 2 Seiten GaAs MMIC
GN01096B
GaAs IC (with built-in ferroelectric)
For low noise amplifier of cellular phone
Other communication equipment
0.2±0.05
654
Unit: mm
0.12
+0.05
−0.02
s Features
• Super miniature S-Mini 6-pin package (2125 size)
• Receiver amplifier : Low distortion with built-in gain control function
s Absolute Maximum Ratings Ta=25 °C
Parameter
Symbol Ratings
Power supply voltage
Circuit current
Gate control voltage
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDD
IDD
VAGC
PIN
PD
Topr
Tstg
8
20
0 to 4
−5
150
−30 to +90
−40 to +120
Unit
V
mA
V
dBm
mW
°C
°C
R0.2
1
2
3
0.65 0.65
2.0±0.1
6 - 0° to 10°
EIAJ : SC-88
1 : RFIN
2 : GND
4 : VDD
5 : GND
3 : VAGC
6 : Source
S Mini Type Package (6-pin)
Marking Symbol : KW
s Electrical Characteristics VDD=2.9 V, PIN=−25 dBm, Ta=25 °C±3 °C
Parameter
Symbol
Conditions
Circuit current *1
Power gain 1 *1
Power gain 2 *1
Noise figure 1 *1, 2
Noise figure 2 *1, 2
IDD VAGC=1.5 V, f=850 MHz
PG1 VAGC=1.5 V, f=850 MHz
PG2 VAGC=0.1 V, f=850 MHz
NF1 VAGC=1.5 V, f=832 MHz
f=850 MHz, f=870 MHz
NF2 VAGC=0.1 V, f=832 MHz
f=850 MHz, f=870 MHz
Dynamic range *1
Input return loss *1, 2
Output return loss *1, 2
Third input intersept point *1, 2
Third output intersept point *1, 2
DR
S11
S22
IIP3
OIP3
VAGC=1.5 V to 0.1 V, f=850 MHz
VAGC=1.5 V, f=850 MHz
VAGC=1.5 V, f=850 MHz
VAGC=1.5 V, f=850 MHz/850.9 MHz
VAGC=1.5 V, f=850 MHz/850.9 MHz
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
min
12.5
−10.0
typ
6.5
15.0
−6.5
1.4
17
18 22
−10
−10
4.0 5.8
16.5 21.0
max
10
17.5
−3.0
2.0
22
27
−6
−6
Unit
mA
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
1
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ GN01096B Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
GN01096B | GaAs IC(with built-in ferroelectric) | Panasonic Semiconductor |
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