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Teilenummer | IKD15N60RF |
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Beschreibung | IGBT | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 16 Seiten IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD15N60RF
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz
Datasheet
IndustrialPowerControl
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=50nH,
Cσ=34pF
Lσ,CσfromFig.E
min.
Value
typ.
max. Unit
- 13 - ns
- 15 - ns
- 160 - ns
- 17 - ns
- 0.27 - mJ
- 0.25 - mJ
- 0.52 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=1030A/µs
- 74 - ns
- 0.42 - µC
- 13.2 - A
- -211 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=175°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=50nH,
Cσ=34pF
Lσ,CσfromFig.E
min.
Value
typ.
max. Unit
- 13 - ns
- 17 - ns
- 173 - ns
- 20 - ns
- 0.45 - mJ
- 0.33 - mJ
- 0.78 - mJ
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=880A/µs
- 142 - ns
- 1.00 - µC
- 16.6 - A
- -133 - A/µs
6 Rev.2.3,2014-03-12
6 Page IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
1
1
D=0.5
D=0.5
0.1 0.2
0.1
0.2
0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
0.1
single pulse
0.01
0.001
1E-7
1E-6
i: 1 2 3 4
ri[K/W]: 0.0478 0.3033 0.2438 0.0281
τi[s]: 9.8E-5 4.4E-4 2.0E-3 0.03723
1E-5 1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s]
1
Figure 21. IGBTtransientthermalimpedanceasa
functionofpulsewidth1)(seepage4)
(D=tp/T)
0.01
1E-7
1E-6
i: 1 2 3 4
ri[K/W]: 0.393 1.0808 0.4767 0.0568
τi[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678
1E-5 1E-4 0.001 0.01 0.1
tp,PULSEWIDTH[s]
1
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth2)(seepage4)
(D=tp/T)
200 1.2
Tj=25°C, IF = 15A
180 Tj=175°C, IF = 15A
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
1.0
160
140
0.8
120
100 0.6
80
0.4
60
40
0.2
20
0
700 800 900 1000 1100 1200 1300 1400 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.0
700 800 900 1000 1100 1200 1300 1400 1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
12 Rev.2.3,2014-03-12
12 Page | ||
Seiten | Gesamt 16 Seiten | |
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