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PDF MTP3055VL Data sheet ( Hoja de datos )

Número de pieza MTP3055VL
Descripción N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! MTP3055VL Hoja de datos, Descripción, Manual

June 2000
DISTRIBUTION GROUP*
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
Features
• 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V
• Critical DC electrical parameters specified at elevated
temperature.
• Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
D
G
D
S
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
PD
TJ, TSTG
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to- Case
Rθ JA
Thermal Resistance, Junction-to- Ambient
(Note 1)
S
Ratings
60
±15
12
42
48
0.32
-65 to +175
3.13
62.5
Package Outlines and Ordering Information
Device Marking
Device
MTP3055VL
MTP3055VL
* Die and manufacturing source subject to change without prior notification.
1999 Fairchild Semiconductor Corporation
Package Information
Rails/Tubes
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
Quantity
45 units
MTP3055VL Rev. A1

1 page





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