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PDF 2SK1834 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1834 | |
| Descripción | Silicon N-Channel Power F-MOS | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK1834 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Power F-MOS FETs
2SK1834
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed : EAS > 15mJ
q VGSS=±30V guaranteed
q High-speed switching : tf = 25ns
q No secondary breakdown
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
dissipation
TC= 25˚C
Ta= 25˚C
Channel temperature
Storage temperature
* L= 7.5mH, IL=2A, VDD= 50V, 1 pulse
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
800
±30
±2
±4
15
40
2
150
–55 to +150
Unit
V
V
A
A
mJ
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
ton
tf
td(off)
Rth(ch-c)
Condition
VDS= 640V, VGS= 0
VGS=±30V, VDS= 0
ID=1mA, VDS= 0
VDS=25V, ID=1mA
VGS=10V, ID=1A
VDS= 25V, ID=1A
IDR= 2A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VGS=10V, ID=1A
VDD=200V, RL=200Ω
2SK1834
10.0±0.2
5.5±0.2
Unit : mm
4.2±0.2
2.7±0.2
ø3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
-0.1
2.54±0.25
5.08±0.5
123
1 : Gate
2 : Drain
3 : Source
TO-220 Full Pack Package (a)
Min Typ Max Unit
0.1 mA
±1 µ A
800 V
2 5V
4.8 7
Ω
0.7 1.1
S
–1.3 V
350 pF
60 pF
25 pF
35 ns
25 ns
60 ns
3.125 ˚C/W
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK1834.PDF ] | |
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