2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
• High power gain
• Excellent frequency response
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
Outline
TO-3P
D
G1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain








15.6 ± 0.3
φ3.2 ± 0.2
4.8 ± 0.2
1.5
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g

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