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P5803NAG Schematic ( PDF Datasheet ) - NIKO-SEM

Teilenummer P5803NAG
Beschreibung N- & P-Channel Enhancement Mode Field Effect Transistor
Hersteller NIKO-SEM
Logo NIKO-SEM Logo 




Gesamt 7 Seiten
P5803NAG Datasheet, Funktion
NIKO-SEM
N- & P-Channel Enhancement Mode
P5803NAG
Field Effect Transistor
TSOP-6
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30V 58mΩ
P-Channel -30V 115mΩ
ID
3A
-2A
DD
D1 S1 D2
GG
SS
6 54
1 23
G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
30 -30
±20 ±20
3 -2
2.3 -1.6
30 -10
0.8 0.8
0.5 0.5
-55 to 150
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to- Ambient
RθJA
1Pulse width limited by maximum junction temperature.
Device
N-Ch
P-Ch
TYPICAL
MAXIMUM
160
160
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
N-Ch 1 1.2 2.5
P-Ch -1 -1.6 -2.5
V
N-Ch
P-Ch
±100
nA
±100
REV 1.0
1 Dec-17-2010






P5803NAG Datasheet, Funktion
NIKO-SEM
N- & P-Channel Enhancement Mode
P5803NAG
Field Effect Transistor
TSOP-6
Halogen-Free & Lead-Free
TYPICAL PERFORMANCE CHARACTERISTICS
P-CHANNEL
Output Characteristics
12
VGS =-10V
10 VGS =-7V
VGS =-4.5V
8
Transfer Characteristics
12
9
6 VGS =-3.5V
4
2
VGS =-2.5V
0
012345
-VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V GS= -10V
0.6 ID= -2.3A
0.4
-50
-25
0
25
50
75
100
125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10
6
25
3
125
-20
0
012 345
-VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
4.00E+02
6
3.20E+02
2.40E+02
Ciss
1.60E+02
8.00E+01
0.00E+00
0
Coss
Crss
5 10 15 20 25
-VDS, Drain-To-Source Voltage(V)
30
Source-Drain Diode Forward Voltage
1.00E+02
8
ID= -2.3A
VDS= -15V
6
1.00E+01
4
1.00E+00
125
25
2
0
0
REV 1.0
246
Qg , Total Gate Charge(nC)
8
1.00E-01
0.0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Source-To-Drain Voltage(V)
1.4
6 Dec-17-2010

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