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Teilenummer | 2SC4002 |
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Beschreibung | NPN Triple Diffused Planar Silicon Transistor | |
Hersteller | ON Semiconductor | |
Logo | ![]() |
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Gesamt 3 Seiten ![]() 2SC4002
Ordering number : ENN2960A
2SC4002
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdown voltage.
• Adoption of MBIT process.
• Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
fT
VCE(sat)
VCE=30V, IC=10mA
IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat) IC=50mA, IB=5mA
V(BR)CBO IC=10µA, IE=0
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
V(BR)CEO
V(BR)EBO
Cob
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=30V, f=1MHz
Reverse Transfer Capacitance
Cre
* : The 2SC4002 is classified by 50mA hFE as follows :
VCB=30V, f=1MHz
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
400
400
5
200
400
600
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
min
60*
400
400
5
Ratings
typ
max
Unit
0.1 µA
0.1 µA
200*
70 MHz
0.6 V
1.0 V
V
V
V
4 pF
3 pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn3seImwiw.cwo.omnsemi.com
Publication Order Number:
2SC4002/D
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ 2SC4002 Schematic.PDF ] |
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