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Número de pieza | ME2N7002E | |
Descripción | N-Channel MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME2N7002E (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N-Channel MOSFET
GENERAL DESCRIPTION
The ME2N7002E is the N-Channel enhancement mode field effect
transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 300mA DC and can
deliver pulsed currents up to 1.2A. These products are particularly
suited for low voltage, low current applications such as small servo
motor control, power MOSFET gate drivers, and other switching
applications.
PIN CONFIGURATION
(SOT-23)
Top View
ME2N7002E
FEATURES
● 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V
● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V
● Super high density cell design for extremely
low RDS (ON)
● Exceptional on-resistance and maximum
DC current capability
● SOT-23 package design
APPLICATIONS
● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability.
● The soldering temperature and time shall not exceed
260℃ for more than 10 seconds.
Maximum ratings and electrical characteristic
Ratings at 25°C ambient temperature unless otherwise specified
Symbol
PARAMETER
VDSS
VGSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage - Continuous
Gate-Source Voltage - Non Repetitive (tp < 50μs)
Drain Current - Continuous (TJ=150°C)
- Pulsed (Note 1)
PD Power Dissipation
TJ , TSTG Operating and Storage Temperature Range
RθJA Thermal Resistance, Junction-to-Ambient
Note :
1. Pulse width limited by safe operating area
TA=25°C
TA=25°C
Typical
60
±20
±40
300
1200
350
-55 ~ +150
375
Units
V
V
V
mA
mW
°C
°C/W
May,2006-Ver3.1
01
1 page N-Channel MOSFET
ME2N7002E
SOT-23 Package Outline
MILLIMETERS
DIM
MIN MAX
A 2.70
3.1
B 1.20
1.6
C 0.9
1.3
D 0.35
0.50
G 1.70
2.10
H 0.013
0.15
J 0.085
0.2
K 0.45
0.7
L 0.89
1.02
S 2.20
2.80
V 0.45
0.60
S72
Body Marking Code :
1. : S72
2. : 702
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME2N7002E.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME2N7002E | N-Channel MOSFET | Matsuki |
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