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PDF FQP16N25C Data sheet ( Hoja de datos )
| Número de pieza | FQP16N25C | |
| Descripción | 250V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP16N25C/FQPF16N25C
250V N-Channel MOSFET
QFET ®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
• 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
{
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G{
●
◀▲
●
●
{
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP16N25C FQPF16N25C
250
15.6 15.6 *
9.8 9.8 *
62.4 62.4 *
± 30
410
15.6
13.9
5.5
139 43
1.11 0.34
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP16N25C
0.9
0.5
62.5
FQPF16N25C
2.89
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
1 page  
Typical Characteristics (Continued)
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N ote s :
1 . Z θJC(t) = 0 .9 0 ℃ /W M a x.
2 . D u ty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP16N25C
100
1 0 -1
D =0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N o tes :
1. Z θJC(t) = 2 .89 ℃ /W M ax.
2. D uty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF16N25C
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP16N25C.PDF ] | |
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