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K222 Schematic ( PDF Datasheet ) - Sanyo Semicon Device

Teilenummer K222
Beschreibung 2SK222
Hersteller Sanyo Semicon Device
Logo Sanyo Semicon Device Logo 




Gesamt 3 Seiten
K222 Datasheet, Funktion
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency,
Low Noise Amplifier Applications
Features
· Ultralow noise figure.
· Large yfs.
· Low gate leakage current.
Package Dimensions
unit:mm
2019B
[2SK222]
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Specifications
123
1.3 1.3
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
PD
Tj
Tstg
Conditions
Ratings
40
–40
10
300
125
–40 to +125
Unit
V
V
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Unit
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Equivqlent Input Noise Voltage
V(BR)GDS
IGSS
IDSS*
VGS(off)
| yfs |
Ciss
Crss
NF1
NF2
VNI
IG=–100µA
VGS=–20V
VDS=10V, VGS=0
VDS=10V, ID=10µA
VDS=10V, VGS=0, f=1kHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, f=1MHz
VDS=10V, VGS=0, Rg=1k, f=100Hz
VDS=10V, VGS=0, Rg=1k, f=1kHz
VDS=10V, VGS=0, Rg=1k, f=1kHz
–40 V
–1.0 nA
0.6* 12.0* mA
0.5 V
17 mS
14 pF
3.5 pF
1.0 3.0 dB
0.6 1.5 dB
2 nV/Hz
* : The 2SK222 is classified by IDSS as follows : (unit : mA). 0.6 C 1.5 1.2 D 3.0 2.5 E 6.0 5.0 F 12.0
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/90895MO (KOTO)6027KI/2075MW 8-3836 No.836–1/3





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