|
|
Teilenummer | VMMK-1218 |
|
Beschreibung | 0.5 to 18 GHz Low Noise E-PHEMT | |
Hersteller | AVAGO | |
Logo | ||
Gesamt 12 Seiten VMMK-1218
0.5 to 18 GHz Low Noise E-PHEMT
in a Wafer Scale Package
Data Sheet
Description
Avago Technologies has combined it’s industry leading
E-pHEMT technology with a revolutionary chip scale
package. The VMMK-1218 can produce an LNA with
high dynamic range, high gain and low noise figure that
generates off of a single position DC power supply. The
GaAsCap wafer scale sub-miniature leadless package is
small and ultra thin, yet can be handled and placed with
standard 0402 pick and place assembly.
The use of 0.25 micron gates allow a ultra low noise figure
(below 1dB from 500 MHz to 12 GHz) with respectable as-
sociated gain. With a flat transconductance over bias and
frequency the VMMK-1218 provides excellent linearity
of over 30 dBm and power over 15 dBm at one dB com-
pression. This product is easy to use since it requires only
positive DC voltages for bias and low matching coeffi-
cients for simple impedance matching to 50 Ω systems.
The VMMK-1218 is intended for any 500MHz to 18GHz ap-
plication including 802.11abgn WLAN, WiMax, BWA 802.16
& 802.20 and military applications.
GaAsCap 0402, 1.0mm x 0.5mm x 0.25mm
• BYY
Gate • BYY
Drain
Pin Connections (Top View)
Notes: Top view package marking provides orientation
Features
• Sub-miniature 0402 (1mm x 0.5mm) Surface Mount
Leadless Package
• Low height (0.25mm)
• Frequency Range 0.5 to 18 GHz
• Enhancement Mode [1]
• 0.25 micron gate width
• Tape and Reel packaging option available
• Point MTTF > 300 years at 120oC channel temperature
Specifications
• 0.7 dB Fmin
• 9.0 dB Ga
• +22 dBm output 3rd order intercept
• +12 dBm output power
Applications
• Low Noise and Driver for Cellular/PCS and WCDMA
Base Stations
• 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
applications
• DBS 10 to 13 GHz receivers
• VSAT and SATCOM 13 to 18 GHz systems
• 802.16 & 802.20 BWA systems
• WLL and MMDS Transceivers
• General purpose discrete E-pHEMT for other ultra low
noise applications
Notes:
1. The Avago enhancement mode pHEMT devices do not require a
negative gate bias voltage as they are “normally off”. They can help
simplify the design and reduce the cost of receivers and transmitters
in many applications from 500 MHz to 18 GHz
gate source
Notes:
“b” = Device Code
“YY” = Year Code
drain
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = MM20 V (class A)
ESD Human Body Model = 100 V (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
VMMK-1218 Typical Scattering Parameters and Noise Parameters, TA=25°C, Vds=1.5V, Ids=20mA [1]
Freq S11
GHz Mag.
Ang.
S21 S12 S22
dB Mag. Ang. Mag. Ang. Mag. Ang.
2
0.89 -78.70
20.79
10.95
129.60
0.07
44.02
0.52 -63.66
3
0.84 -106.97 19.15 9.07 111.99 0.08
28.78
0.46 -87.65
4
0.80 -129.59 17.52 7.52
97.71
0.09
16.70
0.42 -107.45
5
0.79 -147.25 16.06 6.35
86.00
0.09
7.26 0.39 -123.04
6
0.78 -161.95 14.74 5.46
75.76
0.10
-1.08
0.37 -136.55
7
0.77 -174.30 13.53 4.75
66.54
0.10
-7.98
0.36 -148.06
8
0.77 175.11 12.45 4.19
58.04
0.10
-14.20
0.35 -158.27
9
0.77 165.97 11.42 3.72
50.15
0.09
-19.91
0.35 -167.52
10
0.77 157.70 10.49 3.35
42.68
0.09
-25.19
0.35 -175.45
11
0.77 150.33
9.65
3.04
35.68
0.09
-30.03
0.35 177.45
12
0.77 143.54
8.87
2.78
28.84
0.09
-34.60
0.36 171.04
13
0.78 137.15
8.15
2.56
22.27
0.09
-38.83
0.36 164.96
14
0.78 131.00
7.49
2.37
15.98
0.09
-43.10
0.37 159.55
15
0.78 125.21 6.88 2.21
9.72
0.08
-47.12
0.37 154.60
16
0.79 119.39 6.31 2.07
3.42
0.08
-51.06
0.38 150.08
17
0.79 113.54
5.80
1.95
-2.83
0.08
-54.94
0.39 145.54
18
0.79 107.95
5.29
1.84
-8.68
0.08
-58.30
0.40 141.40
MSG/MAG
dB
28.91
25.57
22.87
20.94
19.39
18.04
16.90
15.86
14.95
14.14
13.44
12.80
12.22
11.66
11.18
10.75
10.32
Typical Noise Parameters
Freq Fmin Г opt Г opt Rn/50 Ga
GHz dB
Mag. Ang.
dB
2 0.16 0.717 32.4 0.10 21.86
3 0.24 0.620 48.1 0.10 19.89
4 0.31 0.536 63.5 0.09 18.08
5 0.39 0.464 78.4 0.08 16.45
6 0.47 0.405 93.0 0.08 14.99
7 0.55 0.359 107.1 0.07 13.70
8 0.63 0.326 120.7 0.06 12.59
9 0.70 0.305 134.0 0.06 11.64
10 0.78 0.297 146.9 0.06 10.87
11 0.86 0.302 159.3 0.06 10.27
12 0.94 0.319 171.3 0.05 9.84
13 1.02 0.349 -177.1 0.05 9.59
14 1.09 0.392 -165.9 0.05 9.51
15 1.17 0.447 -155.1 0.05 9.59
16 1.25 0.515 -144.8 0.06 9.85
17 1.33 0.596 -134.8 0.08 10.29
Note:
1. S-parameters are measured in 50 Ohm test environment.
40.00
MSG/MAG
S21
30.00
20.00
10.00
0.00
0
5 10
FREQUENCY GHz
15
Figure 13. MSG/MAG and S21 vs. Frequency at 1.5V 20 mA
20
6 Page Tape Dimensions
Note: 2
P2
Note: 1
Do Po
B
Bo
5º <Max>
A
RO.1
A
Ao
P1
5º <Max>
D1
B
Scale 5:1
A-A Section
Ao = 0.73± 0.05 mm
Bc = 1.26± 0.05 mm
Ko
=
0.35
+
+
0.05
0
mm
Notes:
1. 10 sprocket hole pitch cumulative tolerance is ±0.1 mm
2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole
3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier
4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier
5. Carrier camber shall be not than 1mm per 100mm through a length of 250mm
Symbol
K1
Po
P1
P2
Do
D1
E
F
10Po
W
T
Unit: mm
Scale 5:1
B-B Section
Ko
Parameter and
Test Condition
-
4.0 ± 0.10
4.0 ± 0.10
2.0 ± 0.05
1.55 ± 0.05
0.5± 0.05
1.75 ± 0.10
3.50 ± 0.05
40.0 ± 0.10
8.0 ± 0.20
0.20 ± 0.02
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved.
AV02-1081EN - June 16, 2008
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ VMMK-1218 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
VMMK-1218 | 0.5 to 18 GHz Low Noise E-PHEMT | AVAGO |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |