DataSheet.es    


PDF SSF1090 Data sheet ( Hoja de datos )

Número de pieza SSF1090
Descripción 100V N-Channel MOSFET
Fabricantes Good-Ark 
Logotipo Good-Ark Logotipo



Hay una vista previa y un enlace de descarga de SSF1090 (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! SSF1090 Hoja de datos, Descripción, Manual

SSF1090
100V N-Channel MOSFET
Features
Advanced trench process technology
Ideal for convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% tested
ID =15A
BV=100V
Rdson=0.06Ω (Typ.)
Description
The SSF1090 utilizes the latest processing techniques to achieve high cell
density, low on-resistance and high repetitive avalanche rating. These
features make this device extremely efficient and reliable device for use in
power switching applications and a wide variety of other applications.
Application
n Power switching application
TO-220
Absolute Maximum Ratings
Symbol
Parameter
ID@Tc=25 °C Continuous Drain Current,VGS@10V
ID@Tc=100°C Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current
PD@TC=25°C
Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
15
10
60
42
0.4
±20
240
TBD
28
–55 to +175
Units
A
W
W/°C
V
mJ
mJ
v/ns
°C
Thermal Resistance
Symbol
Parameter
Min.
Typ.
RθJC
Junction-to-Case
— 3.6
RθJA Junction-to-Ambient
*When mounted on the minimum pad size recommendedPCB Mount
Max.
69
Units
°C /W
Electrical Characteristics @TJ=25 °C (unless otherwise specified)
Sym.
Parameter
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 100 — —
V
RDS(on) Static Drain-to-Source On-resistance — 0.06 0.09 Ω
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
—— 1
IDSS
Drain-to-Source Leakage Current
μA
— — 10
IGSS Gate-to-Source Forward Leakage — — 100 nA
1/5
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=2A
VDS=VGS,ID=250μA
VDS=30V,VGS=0V
VDS=100V, VGS=0V,TJ=150°C
VGS=20V

1 page




SSF1090 pdf
TO-220 MECHANICAL DATA
SSF1090
100V N-Channel MOSFET
Symbol
Dimensions in mm
www.goodarksemi.com
5/5 Doc.USSSF1090x2.1

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet SSF1090.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SSF1090N-Channel enhancement mode trench power MOSFETSilikron Semiconductor
Silikron Semiconductor
SSF1090100V N-Channel MOSFETGood-Ark
Good-Ark
SSF1090AMOSFET ( Transistor )Silikron
Silikron
SSF1090DMOSFET ( Transistor )Silikron
Silikron

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar