ATF-511P8 Datasheet PDF - Agilent
| Part Number | ATF-511P8 | |
| Description | Enhancement Mode Pseudomorphic HEMT | |
| Manufacturers | Agilent | |
| Logo |  |
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Agilent ATF-511P8 High Linearity
Enhancement Mode[1]
Pseudomorphic HEMT in
2x2 mm2 LPCC[3] Package
Data Sheet
Description
Agilent Technologies’s
ATF-511P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC[3])
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Note:
1. Enhancement mode technology employs a
single positive Vgs, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
1Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and
identification:
“1P” = Device Code
“x” = Date code indicates the month of
manufacture.
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
• Excellent uniformity in product
specifications
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option
available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
• 41.7 dBm output IP3
• 30 dBm output power at 1 dB gain
compression
• 1.4 dB noise figure
• 14.8 dB gain
• 12.1 dB LFOM[4]
• 69% PAE
Applications
• Front-end LNA Q2 and Q3 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
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ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
50
45
40
35
30
25
20
4.5 V
4V
3V
15
10
50 150 250 350 450 550
IDS (mA)
Figure 8. OIP3 vs. IDS and VDS at 2 GHz.
50
45
40
35
30
25
4.5 V
20 4 V
3V
15
10
50 150 250 350 450 550
IDS (mA)
Figure 9. OIP3 vs. IDS and VDS at 900 MHz.
35
30
25
20
4.5 V
4V
15 3 V
10
50 150 250 350 450 550
Idq (mA)
Figure 11. P1dB vs. Idq and VDS at 900 MHz.
17
16
15
14
13
12 4.5 V
4V
3V
11
10
50 150 250 350 450 550
IDS (mA)
Figure 12. Gain vs. IDS and VDS at 2 GHz.
80
70
60
50
40
30
4.5 V
20 4 V
3V
10
0
50 150 250 350 450 550
Idq (mA)
Figure 14. PAE vs. Idq and VDS at 2 GHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
80
70
60
50
40
30
4.5 V
20 4 V
3V
10
0
50 150 250 350 450 550
Idq (mA)
Figure 15. PAE vs. Idq and VDS at 900 MHz.
35
30
25
20
4.5 V
15
4V
3V
10
50 150 250 350 450 550
Idq (mA)
Figure 10. P1dB vs. Idq and VDS at 2 GHz.
20
19
18
17
16
15 4.5 V
4V
14 3 V
13
50 150 250 350 450 550
IDS (mA)
Figure 13. Gain vs. IDS and VDS at 900 MHz.
50
45
40
35
30 -40 °C
25 °C
85 °C
25
20
0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Figure 16. OIP3 vs. Temp and Freq.
4
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ATF-511P8 electronic component. |
| Information | Total 16 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ATF-511P8.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| ATF-511P8 | The function is Enhancement Mode Pseudomorphic HEMT. Agilent | |
| ATF-511P8 | The function is High Linearity Enhancement Mode Pseudomorphic HEMT. AVAGO |  |
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