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UBA2213 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer UBA2213
Beschreibung Half-bridge power IC
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 21 Seiten
UBA2213 Datasheet, Funktion
UBA2213
Half-bridge power IC family for CFL lamps
Rev. 2 — 21 November 2011
Product data sheet
1. General description
The UBA2213 family of integrated circuits are a range of high voltage monolithic ICs for
driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. The family is
designed to provide easy integration of lamp loads across a range of burner power and
mains voltages.
2. Features and benefits
2.1 System integration
Integrated half-bridge power transistors
UBA2213A: 220 V; 13.5 ; 0.9 A maximum ignition current
UBA2213B: 220 V; 9 ; 1.35 A maximum ignition current
UBA2213C: 220 V; 6.6 ; 1.85 A maximum ignition current
Integrated bootstrap diode
Integrated high-voltage supply
2.2 General
Adjustable current controlled preheat mode enables the preheat time (tph) to be set
Glow-time control minimizes electrode damage in non-preheat applications
RMS current control
2.3 Fast and smooth light out
Boost with externally controlled timing
Temperature controlled timing during boost state
Smooth transition from boost to burn state
2.4 Burner lifetime
Current controlled preheat with adjustable preheat time
Minimum glow time control to support cold start
Lamp power independent from mains voltage variations
Lamp inductor saturation protection during ignition






UBA2213 Datasheet, Funktion
NXP Semiconductors
UBA2213
Half-bridge power IC family for CFL lamps
The output voltage of the bridge changes with the falling edge of the signal on pin RC. The
nominal half-bridge frequency is shown in Equation 1:
foscnom
=
---------------------1----------------------
kosc Rosc Cosc
(1)
The maximum frequency is 2.5 fosc(nom) and is set at VSW. An overview of the oscillator,
internal LSPT and HSPT drive signals and the output is shown in Figure 4.
VRC
0 time (s)
HSPT driver
0
time (s)
LSPT driver
0
VOUT
half-bridge
0
Fig 4. Oscillator, HSPT/LSPT drivers and output signals
time (s)
time (s)
001aam035
7.5 Preheat state
As described in Section 7.2, the IC enters the preheat state when the voltage on pin
VDD is above VDD(start) and OTP is not active. The sweep current (ISW) charges the
capacitor on pin SW (CSW). The preheat Operational Transconductance Amplifier (OTA) is
enabled and the half-bridge circuit starts oscillating.
The preheat current is monitored using the external RSENSE resistor. The OTA controls the
frequency using output voltage VSW(ph) so that the peak voltage across RSENSE equals the
internal reference voltage (Vref(ph)). The peak voltage is the voltage at the end of the LSPT
conduction time. The preheat peak current through the lamp filament is calculated as
shown in Equation 2:
Iphpeak
=
V----r--e---f---p---h--
RSENSE
(2)
The external capacitor (CSW) defines the preheat time. Typically, the external capacitor is
calculated as shown in Equation 3.The preheat state ends when the down-going CSW
voltage equals VSW(ph); see Figure 4.
UBA2213
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 November 2011
© NXP B.V. 2011. All rights reserved.
6 of 21

6 Page









UBA2213 pdf, datenblatt
NXP Semiconductors
UBA2213
Half-bridge power IC family for CFL lamps
Table 5. Characteristics …continued
Tj = 25 C; all voltages are measured with respect to SGND; positive currents flow into the IC.
Symbol
Parameter
Conditions
Min
Isat
saturation current
high-side transistor:
[1]
UBA2213AX; VDS = 30 V; Tj 125 C;
VI(HV) = 310 V
0.90
UBA2213BX; VDS = 30 V; Tj 125 C;
VI(HV) = 310 V
1.35
UBA2213CX; VDS = 30 V; Tj 125 C;
VI(HV) = 310 V
1.85
low-side transistor:
[1]
Internal oscillator
UBA2213AX; VDS = 30 V; Tj 125 C
UBA2213BX; VDS = 30 V; Tj 125 C
UBA2213CX; VDS = 30 V; Tj 125 C
0.90
1.35
1.85
fosc(int)
fosc(nom)
fosc(nom)/T
internal oscillator frequency
nominal oscillator frequency
nominal oscillator frequency
variation with temperature
VSW = VDD; steady state
Rosc = 100 k; Cosc = 220 pF;
VSW = VDD
Rosc = 100 k; Cosc = 220 pF;
T = 20 to +150 C
-
40.05
-
kH
kL
VH(RC)
high-level trip point factor
low-level trip point factor
HIGH-level voltage on pin
RC
trip point; VH(RC) = kH VDD
0.371
0.028
4.08
VL(RC)
LOW-level voltage on pin
RC
trip point; VL(RC) = kL VDD
0.308
Kosc oscillator constant
Preheat function
Rosc = 100 k; Cosc = 220 pF
1.065
Vref(ph)
tph
preheat reference voltage
preheat time
Boost function
CSW = 100 nF
CSW = 68 nF
-
-
-
fbst
Tj(end)bst
boost frequency
boost end junction
temperature
Rosc = 100 k; Cosc = 220 pF;
VSW= VDD
-
-
tbst boost time
tt transition time
RMS current control function
CSW = 68 nF
CSW = 68 nF
-
-
VO(ref)RMS
RMS reference output
voltage
262
Typ Max Unit
--A
--A
--A
--A
--A
--A
- 60 kHz
41.32 42.68 kHz
2-
%
0.384 0.397
0.032 0.036
4.22 4.37 V
0.352 0.396 V
1.1 1.135
620 -
1.2 -
0.8 -
mV
s
s
26 -
85 -
51 -
0.7 -
kHz
C
s
s
285 308 mV
UBA2213
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 November 2011
© NXP B.V. 2011. All rights reserved.
12 of 21

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