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PDF MJE13007G Data sheet ( Hoja de datos )
| Número de pieza | MJE13007G | |
| Descripción | NPN Bipolar Power Transistor | |
| Fabricantes | ON Semiconductor | |
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MJE13007G
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
Features
• SOA and Switching Applications Information
• Standard TO−220
• These Devices are Pb−Free and are RoHS Compliant*
• Complementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
Emitter Current − Continuous
Emitter Current − Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
400 Vdc
700 Vdc
9.0 Vdc
8.0 Adc
16 Adc
4.0 Adc
8.0 Adc
12 Adc
24 Adc
80 W
0.64 W/_C
Operating and Storage Temperature
TJ, Tstg −65 to 150 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56 _C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260 _C
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 8
1
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS − 80 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13007G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13007G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13007/D
1 page  
MJE13007G
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2. (Note 1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are
important in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (VCEV), this is the recommended
and specified use condition. Maximum ICEV at rated VCEV
is specified at a relatively low reverse bias (1.5 Volts) both
at 25°C and 100°C. Increasing the reverse bias will give
some improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn−on and turn−off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn−on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage−current conditions that
can be sustained during reverse biased turn−off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
NOTE: 1. For detailed information on specific switching applications,
see ON Semiconductor Application Note AN719, AN873,
AN875, AN951.
http://onsemi.com
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| PDF Descargar | [ Datasheet MJE13007G.PDF ] | |
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