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Teilenummer | 2N5415 |
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Beschreibung | (2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR | |
Hersteller | CDIL | |
Logo | ||
Gesamt 4 Seiten Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON HIGH VOLTAGE TRANSISTOR
2N 5415, 16
TO-39
Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military,
Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N5415
2N5416
Collector Emitter Voltage
VCEO
200
300
Collector Base Voltage
VCBO
200
350
Emitter Base Voltage
VEBO
4
6
Collector Current Continuous
IC
(--------------------1------------------)
Base Current Continuous
IB
(-----------------0.5------------------)
Power Dissipation @ Ta=50ºC
PD
(--------------------1------------------)
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
PD
(------------------10-------------------
Derate Above 25ºC
Junction Temperature
Tj
(--------------------200-----------------
Operating And Storage Junction
Tstg
-65 to +200
Temperature Range
UNITS
V
V
V
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
Rth(j-a)
Rth(j-c)
150 ºC/W
17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Breakdown Voltage BVCEO(sus)*
IC=50mA,IB=0
Collector Cut off Current
ICBO VCB=175V, IE=0
VCB=280V, IE=0
Collector Cutoff Current
ICEO
VCE=150V, IB=0
VCE=250V, IB=0
Emitter Cut off Current
IEBO
VEB=4V, IC=0
VEB=6V, IC=0
2N5415
>200
<50
<50
<20
2N5416
>300
<50
<50
<20
UNITS
V
µA
µA
µA
µA
µA
µA
Collector Emitter Saturation Voltage
VCE(Sat)
IC=50mA,IB=5mA
<2.5
<2
V
Base Emitter Saturation Voltage
DC Current Gain
VBE(Sat)
hFE*
IC=50mA,IB=5mA
IC=50mA,VCE=10V
<1.5 <1.5
30-150 30-120
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ 2N5415 Schematic.PDF ] |
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