(PDF) K2959 Datasheet - Silicon N Channel MOS FET

Número de pieza	K2959
Descripción	Silicon N Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G S ADE-208-569C (Z) 4th. Edition Aug 1998 1 2 3 1. Gate 2. Drain(Flange 3. Source 1 page 2SK2959 Body–Drain Diode Reverse Recovery Time 100 50 20 10 5 2 di / dt = 50 A / µs 1 0.1 0.3 VGS = 0, Ta = 25 °C 1 3 10 30 100 Reverse Drain Current I DR (A) 10000 Typical Capacitance vs. Drain to Source Voltage 3000 1000 300 100 Ciss Coss Crss 300 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 50 A 40 20 16 30 VDS 20 VGS VDD = 5 V 10 V 25 V 12 8 10 VDD = 25 V 4 10 V 5V 0 0 20 40 60 80 100 Gate Charge Qg (nc) 1000 500 200 100 50 Switching Characteristics VGS = 10 V, V DD = 10 V PW = 5 µs, duty < 1 % t d(off) tf tr t d(on) 20 10 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 5 5 Page

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PDF K2959 Data sheet ( Hoja de datos )