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MBRS240G Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer MBRS240G
Beschreibung (MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers
Hersteller American First Semiconductor
Logo American First Semiconductor Logo 




Gesamt 2 Seiten
MBRS240G Datasheet, Funktion
Chip Schottky Barrier Rectifier
MBRS220G THRU MBRS2100G
2.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen-free parts, ex. MBRS220G-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, DO-214AC / SMA
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
2.0 A
50 A
IR
RθJA
RθJC
CJ
TSTG
0.5
mA
10
55 OC/W
30 OC/W
160 pF
-65 +175 OC
SYMBOLS
MBRS220G
MBRS230G
MBRS240G
MBRS250G
MBRS260G
MBRS280G
MBRS2100G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.50
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
@ 2010 Copyright By American First Semiconductor
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