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MBRS1150G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | MBRS1150G |
|
| Beschreibung | (MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Chip Schottky Barrier Rectifier
MBRS120G THRU MBRS1200G
1.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. MBRS120G-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, DO-214AC / SMA
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
SYMBOL MIN.
IO
TYP.
MAX. UNIT
1.0 A
IFSM 30 A
IR
RθJA
CJ
TSTG
0.5
mA
10
88 OC/W
120 pF
-65 +175 OC
SYMBOLS
MBRS120G
MBRS130G
MBRS140G
MBRS150G
MBRS160G
MBRS180G
MBRS1100G
MBRS1150G
MBRS1200G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21
28
35
42
56
70
105
140
V
*
R
3
(V)
20
30
40
50
60
80
100
150
200
V
*
F
4
(V)
0.50
0.70
0.85
0.92
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
@ 2010 Copyright By American First Semiconductor
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