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EF202PG Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | EF202PG |
|
| Beschreibung | (EF201PG - EF205PG) 2.0A Glass Passivated Leaded Efficient Fast Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Silicon Rectifier
2.0A Glass Passivated Leaded
Efficient Fast Rectifiers - 50-600V
Features
• Low profile surface mounted application in order to
optimize board space.
• Trr less than 25ns for high efficiency
• High current & surge capability.
• Low forward dropdown voltage
• Glass passivated chip junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. EF201PG-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-15
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 0.40 gram
EF201PG THRU EF205PG
Package outline
DO-15
.140(3.6)
.104(2.6)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 55OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 2.0 A
IFSM 50 A
5.0
IR
µA
100
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
EF201PG 50 35 50
EF202PG 100 70 100 0.875
EF203PG 200 140 200
25
EF204PG 400 280 400 1.25
EF205PG 600 420 600 1.75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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