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FMEG305DG Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FMEG305DG |
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| Beschreibung | (FMEG301DG - FMEG305DG) 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
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Gesamt 2 Seiten 
Chip Silicon Rectifier
FMEG301DG THRU FMEG305DG
3.0A Glass Passivated Sufrace Mount
Efficient Fast Rectifiers - 50-600V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Trr less than 25ns for high efficiency.
• High current & surge capability.
• Low forward dropdown voltage.
• Glass passivated chip junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. FMEG301DG-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AB / SMC
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight :Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 55OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 100 A
5.0
IR
μA
100
CJ 30 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FMEG301DG 50 35 50
FMEG302DG 100 70 100 0.875
FMEG303DG 200 140 200
25
FMEG304DG 400 280 400 1.25
FMDG305DG 600 420 600 1.75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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