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FMEG105DG Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FMEG105DG |
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| Beschreibung | (FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
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Gesamt 2 Seiten 
Chip Silicon Rectifier
FMEG101DG THRU FMEG105DG
1.0A Glass Passivated Sufrace Mount
Efficient Fast Rectifiers - 50-600V
Features
• Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead- free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. FMEG101DG-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, DO-214AC / SMA
• Terminals: Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 55OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
100
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FMEG101DG 50 35 50
FMEG102DG 100 70 100 0.875
FMEG103DG 200 140 200
25
FMEG105DG 400 280 400 1.25
FMEG105DG 600 420 600 1.75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I =1F.0A
*5 Reverse recovery time , note 1
@ 2010 Copyright By American First Semiconductor
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