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HER504G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | HER504G |
|
| Beschreibung | (HER501G - HER508G) 5.0A Leaded Type Fast Recovery Effciency Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Silicon Rectifier
HER501G THRU HER508G
5.0A Leaded Type Fast Recovery
Effciency Rectifiers-50V-1000V
Features
• Axial lead type devices for through hole design.
• 5.0A operating at TA=55°C without thermal run away
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HER501G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 1.10 gram
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 5.0 A
IFSM 200 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
R
*
R
5
(nS)
HER501G
HER502G
HER503G
HER504G
HER505G
HER506G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER507G
HER508G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=5.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ HER504G Schematic.PDF ] | |
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