|
|
|
HER308G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | HER308G |
|
| Beschreibung | (HER301G - HER308G) 3.0A Leaded Type High Effciency Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Silicon Rectifier
3.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
• Axial lead type devices for through hole design.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HER301G-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 1.10 gram
HER301G THRU HER308G
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 150 A
5.0
IR
μA
100
CJ 75 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER301G
HER302G
HER303G
HER304G
HER305G
HER306G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER307G
HER308G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
| ||
| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ HER308G Schematic.PDF ] | |
Link teilen
Besondere Datenblatt
| Teilenummer | Beschreibung | Hersteller |
| HER308 | 3A High Efficiency Diodes |  Leshan Radio Company |
| HER308 | HIGH EFFICIENCY RECTIFIER(VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere) |  Rectron Semiconductor |
| HER308 | 3.0 AMPS.HIGH EFFICIENCY RECTIFIERS |  Jinan Gude Electronic Device |
| HER308 | 3.0A HIGH EFFICIENCY RECTIFIER |  Won-Top Electronics |
| HER308 | 3.0 Amp High Efficient Rectifiers 50 to 1000 Volts |  Micro Commercial Components |
| Teilenummer | Beschreibung | Hersteller |
| CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
 Fairchild Semiconductor |
| KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
 KEC |
| www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |