Datenblatt-pdf.com


HER102G Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer HER102G
Beschreibung (HER101G - HER108G) 1.0A Leaded Type High Effciency Rectifiers
Hersteller American First Semiconductor
Logo American First Semiconductor Logo 




Gesamt 2 Seiten
HER102G Datasheet, Funktion
Silicon Rectifier
HER101G THRU HER108G
1.0A Leaded Type High
Effciency Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. HER101G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-41
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 0.33 gram
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
150
CJ 20 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
HER101G
HER102G
HER103G
HER104G
HER105G
HER106G
50
100
200
300
400
600
35 50
70 100
140 200
210 300
280 400
420 600
1.00
1.30
50
HER107G
HER108G
800
1000
560
700
800
1000
1.85
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2





SeitenGesamt 2 Seiten
PDF Download[ HER102G Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
HER1021.0A HIGH EFFICIENCY RECTIFIERDiodes Incorporated
Diodes Incorporated
HER1021.0A HIGH EFFICIENCY RECTIFIERWon-Top Electronics
Won-Top Electronics
HER1021.0 Amp High Efficient Rectifiers 50 to 1000 VoltsMicro Commercial Components
Micro Commercial Components
HER1021A HIGH EFFICIENCY GPP DIODESLeshan Radio Company
Leshan Radio Company
HER102HIGH EFFICIENCY RECTIFIERS(1.0A/50-400V)Mospec Semiconductor
Mospec Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche