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MURA330G Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer MURA330G
Beschreibung (MURA305G - MURA3100G) 3.0A Surface Mount High Effciency Rectifiers
Hersteller American First Semiconductor
Logo American First Semiconductor Logo 




Gesamt 2 Seiten
MURA330G Datasheet, Funktion
Chip Silicon Rectifier
MURA305G THRU MURA3100G
3.0A Surface Mount High
Effciency Rectifiers - 50V-1000V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability.
Ultrafast recovery time for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. MURA305G-H.
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, JEDEC DO-214AB / SMC
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight :Approximated 0.19 gram
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 55OC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 3.0 A
IFSM 100 A
5.0
IR
μA
300
RθJA
CJ
15 OC/W
70 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
MURA305G
MURA310G
MURA320G
MURA330G
MURA360G
MURA380G
MURA3100G
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
1.00
1.30
1.70
50
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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