|
|
|
MURA260BG Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | MURA260BG |
|
| Beschreibung | (MURA205BG - MURA2100BG) 2.0A Surface Mount High Effciency Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Chip Silicon Rectifier
MURA205BG THRU MURA2100BG
2.0A Surface Mount High
Effciency Rectifiers - 50V-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. MURA205BG-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, JEDEC DO-214AA / SMB
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight :Approximated 0.09 gram
Package outline
SMB
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.032(0.8) Typ.
0.075(1.9)
0.067(1.7)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 50OC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 2.0 A
IFSM 70 A
5.0
IR
μA
150
RθJA
CJ
20 OC/W
25 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
MURA205BG
MURA210BG
MURA220BG
MURA240BG
MURA260BG
MURA280BG
MURA2100BG
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
50
100
200
400
600
800
1000
1.00
1.30
1.70
50
75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
| ||
| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ MURA260BG Schematic.PDF ] | |
Link teilen
Besondere Datenblatt
| Teilenummer | Beschreibung | Hersteller |
| MURA260BG | (MURA205BG - MURA2100BG) 2.0A Surface Mount High Effciency Rectifiers | American First Semiconductor |
| Teilenummer | Beschreibung | Hersteller |
| CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
 Fairchild Semiconductor |
| KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
 KEC |
| www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |