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FR101G Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer FR101G
Beschreibung (FR101G - FR107G) 1.0A Leaded Type Glass Passivated Fast Recovery Rectifiers
Hersteller American First Semiconductor
Logo American First Semiconductor Logo 




Gesamt 2 Seiten
FR101G Datasheet, Funktion
Silicon Rectifier
1.0A Leaded Type Glass Passivated
Fast Recovery Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass passivated chip junction structure
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free parts, ex. FR101G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-41
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 0.33 gram
FR101G THRU FR107G
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
100
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FR101G
FR102G
FR103G
FR104G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FR105G
600
420 600
250
FR106G
FR107G
800
1000
560
700
800
1000
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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