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FFM302G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FFM302G |
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| Beschreibung | (FFM301G - FFM307G) 3.0A Surface Mount Fast Recovery Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Chip Silicon Rectifier
3.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead- free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. FFM301-MG-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, DO-214AB / SMC
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.19 gram
FFM301G THRU FFM307G
Package outline
SMC
0.272(6.9)
0.248(6.3)
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.048(1.2) Typ.
0.098(2.5)
0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
CONDITIONS
Ambient temperature = 55oC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
3.0 A
100 A
5.0
IR
μA
300
RθJA
CJ
50 OC/W
60 pF
TSTG
-65
+175 OC
SYMBOLS
V
R
*
RM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM301G
FFM302G
FFM303G
FFM304G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FFM305G
FFM306G
FFM307G
600
800
1000
420
560
700
600
800
1000
250
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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| PDF Download | [ FFM302G Schematic.PDF ] | |
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