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FFM202G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FFM202G |
|
| Beschreibung | (FFM201G - FFM207G) 2.0A Fast Recovery Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
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Gesamt 2 Seiten 
Chip Silicon Rectifier
2.0A Fast Recovery
Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead- free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. FFM201-MG-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, JEDEC DO-214AC / SMA
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.05 gram
FFM201G THRU FFM207G
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 2.0 A
IFSM 50 A
5.0
IR
μA
100
RθJA
CJ
35 OC/W
40 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM201G
FFM202G
FFM203G
FFM204G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FFM205G
FFM206G
FFM207G
600
800
1000
420
560
700
600
800
1000
250
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
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| Seiten | Gesamt 2 Seiten | |
| PDF Download | [ FFM202G Schematic.PDF ] | |
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