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FFM107G Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FFM107G |
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| Beschreibung | (FFM101G - FFM107G) 1.0A Surface Mount Fast Recovery Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
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Gesamt 2 Seiten 
Chip Silicon Rectifier
FFM101G THRU FFM107G
1.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. FFM101G-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, JEDEC DO-214AC / SMA
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 75oC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
100
RθJA
42 OC/W
CJ 15 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FFM101G
FFM102G
FFM103G
FFM104G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FFM105G
FFM106G
FFM107G
600
800
1000
420
560
700
600
800
1000
250
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2
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| PDF Download | [ FFM107G Schematic.PDF ] | |
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