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1N5396G Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer 1N5396G
Beschreibung (1N5391G - 1N5399G) 1.0A Leaded Type Glass Purpose Rectifiers
Hersteller American First Semiconductor
Logo American First Semiconductor Logo 




Gesamt 2 Seiten
1N5396G Datasheet, Funktion
Silicon Rectifier
1.0A Leaded Type Glass Purpose
Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
High surge capability.
Glass passivated chip junction inside.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. 1N5391G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-15
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 0.40 gram
1N5391G THRU 1N5399G
Package outline
DO-15
.140(3.6)
.104(2.6)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.5 A
IFSM 50 A
5.0
IR
μA
50
RθJA
CJ
50 OC/W
20 pF
TSTG
-65
+175 OC
SYMBOLS
1N5391G
1N5392G
1N5393G
1N5395G
1N5397G
1N5398G
1N5399G
V
*
RRM
1
(V)
50
100
200
400
600
800
1000
V
*
RMS
2
(V)
35
70
140
280
420
560
700
V
*
R
3
(V)
50
100
200
400
600
800
1000
V
*
F
4
(V)
1.10
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.5A
@ 2010 Copyright By American First Semiconductor
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