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FM610C-DG Schematic ( PDF Datasheet ) - American First Semiconductor
| Teilenummer | FM610C-DG |
|
| Beschreibung | (FM601C-DG - FM610C-DG) 6.0A Surface Mount General Purpose Rectifiers | |
| Hersteller | American First Semiconductor | |
| Logo |  |
|
Gesamt 2 Seiten 
Chip Silicon Rectifier
FM601C-DG THRU FM610C-DG
6.0A Surface Mount General Purpose
Rectifiers - 50V-1300V
Features
• Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• High surge capability.
• Glass passivated chip junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free parts, ex. FM601C-DG-H.
Mechanical data
• Epoxy: UL94-V0 rated flame retardant
• Case : Molded plastic, TO-252 / DPAK
• Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight :Approximated 0.34 gram
Package outline
TO-252AC
0.048(1.20)
0.031(0.80)
0.264(6.70)
0.248(6.30)
0.217(5.50)
0.201(5.10)
0.098(2.50)
0.083(2.10)
0.024(0.60)
0.016(0.40)
0.244(6.20)
0.228(5.80)
0.114(2.90)
0.098(2.50)
0.185(4.70)
0.169(4.30)
0.039(1.00)
0.031(0.80)
0.024(0.60)
0.016(0.40)
0.032(0.80)
0.016(0.40)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX. UNIT
6.0 A
IFSM 70 A
5.0
IR
µA
250
RθJA
CJ
47 OC/W
40 pF
TSTG
-55
+150 OC
SYMBOLS
FM601C-DG
FM602C-DG
FM604C-DG
FM606C-DG
FM608C-DG
FM610C-DG
V
*
RRM
1
(V)
100
200
400
600
800
1000
V
*
RMS
2
(V)
70
140
280
420
560
700
V
*
R
3
(V)
100
200
400
600
800
1000
V
*
F
4
(V)
1.10
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
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