FIGB25N120TDG Schematic ( PDF Datasheet ) - American First Semiconductor

Teilenummer	FIGB25N120TDG
Beschreibung	IGBT
Hersteller	American First Semiconductor
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Gesamt 4 Seiten IGBT General Description Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation. Features ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability Application ƽ Power switch circuit of induction cooker(IH). FIGB25N120TDG PIN Connection TO-3P/TO-247AD G CE VCES IC Ptot TC=25℃ VCE(SAT) 1200 V 25 A 320 W 2.0 V Marking Diagram YAWW FIGB 25N120TD Y = Year A = Assembly Location WW = Work Week FIGB25N120TD = Specific Device Code Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol VCES VGES IC ICMa1 IF IFM PD TJ，Tstg TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C Diode Maximum Forward Current Power Dissipation @ TC = 25°C Power Dissipation @TC = 100 °C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 1200 ±20 50 25 75 25 150 320 130 -55 to +150 300 @ 2010 Copyright By American First Semiconductor Units V V A A A A A W W ℃ ℃ Page 1/4
Seiten	Gesamt 4 Seiten
PDF Download	[ FIGB25N120TDG Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
FIGB25N120TDG	IGBT	American First Semiconductor

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