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PDF MBR40020CT Data sheet ( Hoja de datos )
| Número de pieza | MBR40020CT | |
| Descripción | (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive
MBR40020CT thru MBR40040CTR
VRRM = 20 V - 40 V
IF(AV) = 400 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) Unit
Average forward current
(per pkg)
Peak forward surge
current (per leg)
IF(AV)
IFSM
TC = 125 °C
tp = 8.3 ms, half sine
Maximum forward
voltage (per leg)
VF
Reverse current at rated
DC blocking voltage
(per leg)
IR
Thermal characteristics
IFM = 200 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
Thermal resistance,
junction-case, per leg
RΘJC
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
400
3000
0.70
1
10
50
0.35
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MBR40020CT.PDF ] | |
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