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Teilenummer | HFS7N60 |
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Beschreibung | 600V N-Channel MOSFET | |
Hersteller | SemiHow | |
Logo | ||
Gesamt 7 Seiten Dec 2005
HFS7N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.96 Ω
ID = 7.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 40 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
7.0*
4.4*
28*
±30
420
7.0
4.8
5.5
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
48
0.38
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Decy 2005
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--uu--ll-ss-ee---PW--e-id-r-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
◎ SEMIHOW REV.A0,Decy 2005
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ HFS7N60 Schematic.PDF ] |
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