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HFS7N80 Schematic ( PDF Datasheet ) - SemiHow

Teilenummer HFS7N80
Beschreibung 800V N-Channel MOSFET
Hersteller SemiHow
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Gesamt 7 Seiten
HFS7N80 Datasheet, Funktion
July 2005
HFS7N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 1.55 ȍ
ID = 7.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
7.0*
4.4*
28*
ρͤ͡
580
7.0
16.7
5.5
PD Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
56
0.44
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.25
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡






HFS7N80 Datasheet, Funktion
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---id--t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡

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