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PDF PTP5027 Data sheet ( Hoja de datos )
| Número de pieza | PTP5027 | |
| Descripción | NPN Silicon Power Transistor | |
| Fabricantes | Power Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PTP5027 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Aug 2006
PTP5027
NPN Silicon Power Transistor
3.0 Amperes / 50 Watts
TO-220
1. Base
2. Collector
3. Emitter
High Voltage and High Reliability
- High Speed Switching
- Wide SOA
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
1 23
RATING
1100
800
7
3
10
1.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Electrical Characteristics TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
VCBO
VCEO
VEBO
ICEX(sus)
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IE=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
1100
800
7
800
Collector Cut0off Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
Note : hFE1 Classification
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
ton
tstg
tf
N :10 ~ 20,
VCB=800V,IE=0
VEB=5V,IC=0
VCE=5V,IC=0.2A
VCE=5V,IC=1A
IC=1.5A,IB=0.3A
IC=1.5A,IB=0.3A
VCB=10V,IE=0, f=0.1MHz
VCE=10V,IC=0.2A
Vcc=400V, Ic=5A
IB1=-2.5A, IB2=2A
RL=200Ω
R : 15 ~ 30, O : 20 ~ 40
10
8
Aug 2006
Typ. Max Unit
V
V
V
V
10 μA
10 μA
40
2V
1.5 V
60 pF
15 MHz
0.5 μS
3.0 μS
0.3 μS
Power Device REV.A0
1 page  
Reliability Qualification
A. High Temperature Reverse Bias ( HTRB )
The purpose of this test is to determine the sensitivity of the product to mobile ion contamination and
related failure mechanisms.
Conditions: JESD22-A108, JIS C 7021 B-8
TA=150℃ VCB=80% max rated VCB
Sample Size
45
#of Fail
0
Cum. Fail%
0.0%
168hrs
0
300hrs
0
B. Pressure Cooker Test ( PCT )
Autoclave ( ACLV )
The purpose of this test is to evaluate the moisture resistance of non-hermetic components under
pressure/temperature conditions.
Conditions: JESD22-A102, JIS C 7021 A-6
TA=121℃ RH=100% P=1 atmosphere (15psig)
Sample Size
45
#of Fail
0
Cum. Fail%
0.0%
48hrs
0
C. Temperature Humidity Bias ( THBT )
The purpose of this test is to evaluate the moisture resistance of non-hermetic components.
The addition of voltage bias accelerates the corrosive effect after moisture penetration has taken place.
with time, this is a catastrophically destructive test.
Conditions: JESD22-A101
TA=85℃ RH=85% VCB=80% max rated VCB
Sample Size
#of Fail
Cum. Fail%
168hrs
300hrs
45
0
0.0%
00
Aug 2006
Power Device REV.A0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTP5027.PDF ] | |
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