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PDF STB21NK50Z Data sheet ( Hoja de datos )
| Número de pieza | STB21NK50Z | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB21NK50Z
N-channel 500 V, 0.23 Ω, 17 A, D2PAK
Zener-protected superMESH™ Power MOSFET
Features
Type
VDSS
STB21NK50Z 500 V
RDS(on)
max
< 0.27 Ω
ID Pw
17 A 190 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching applications
– Automotive
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STB21NK50Z
Marking
21NK50Z
Package
D²PAK
Packaging
Tape and reel
September 2008
Rev 1
1/13
www.st.com
13
1 page  
STB21NK50Z
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD= 250 V, ID= 8.5 A,
RG= 4.7Ω, VGS= 10 V
(see Figure 16)
VDD= 250 V, ID= 8.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 16)
Min. Typ. Max. Unit
28 ns
20 ns
70 ns
15 ns
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 9. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17 A, VGS=0
ISD= 17 A,
di/dt = 100 A/µs,
VR= 100 V
(see Figure 16)
ISD= 17 A,
di/dt = 100 A/µs,
VR= 100 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
17 A
68 A
1.6 V
355 ns
3.90 µC
22 A
440 ns
5.72 µC
25 A
5/13
5 Page 
STB21NK50Z
5 Packaging mechanical data
D2PAK FOOTPRINT
Packaging mechanical data
TAPE AND REEL SHIPMENT
TAPE MECHANICAL DATA
DIM.
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
mm inch
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
1.5 1.6 0.059 0.063
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
11.4 11.6 0.449 0.456
4.8 5.0 0.189 0.197
3.9 4.1 0.153 0.161
11.9 12.1 0.468 0.476
1.9 2.1 0.075 0.082
50 1.574
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
* on sales type
REEL MECHANICAL DATA
DIM.
A
B
C
D
G
N
T
mm inch
MIN. MAX. MIN. MAX.
330 12.992
1.5 0.059
12.8 13.2 0.504 0.520
20.2 0795
24.4 26.4 0.960 1.039
100 3.937
30.4 1.197
BASE QTY
1000
BULK QTY
1000
11/13
11 Page | ||
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| PDF Descargar | [ Datasheet STB21NK50Z.PDF ] | |
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