PDF IXGH60N60C3 Data sheet ( Hoja de datos )

Número de pieza	IXGH60N60C3
Descripción	High Speed PT IGBT
Fabricantes	IXYS Corporation
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No Preview Available ! GenX3TM 600V IGBT High Speed PT IGBT for 40-100kHz Switching IXGH60N60C3 VCES = IC110 = V ≤CE(sat) tfi (typ) = 600V 60A 2.5V 50ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 600 ±20 ±30 V V V V 75 60 360 40 400 ICM = 125 ≤VCE VCES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 A A A A mJ A W °C °C °C °C °C Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE= 0V IGES VCE(sat) VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V TJ = 125°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 50 μA 1 mA ±100 nA 2.2 2.5 V 1.7 V TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features z Optimized for Low Switching Losses z Square RBSOA z Avalanche rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2010 IXYS CORPORATION, All Rights Reserved DS99928B(01/10) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 3.5 Eoff Eon - - - - TJ = 125ºC , VGE = 15V 3.0 VCE = 480V 2.5 I C = 80A 5.0 4.5 4.0 3.5 2.0 3.0 1.5 2.5 1.0 I C = 40A 2.0 0.5 1.5 0.0 1.0 3 4 5 6 7 8 9 10 11 12 13 14 15 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.5 4.0 3.0 Eoff Eon - - - - RG = 3Ω , VGE = 15V 2.5 VCE = 480V 2.0 I C = 80A 1.5 3.5 3.0 2.5 2.0 1.0 I C = 40A 0.5 1.5 1.0 0.0 0.5 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 180 140 160 tf td(off) - - - - 130 RG = 3Ω , VGE = 15V 140 VCE = 480V 120 120 100 TJ = 125ºC 110 100 80 90 60 TJ = 25ºC 80 40 70 20 60 20 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved IXGH60N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.0 4.0 3.5 Eoff Eon - - - - RG = 3Ω , VGE = 15V 3.0 VCE = 480V 2.5 2.0 TJ = 125ºC 3.5 3.0 2.5 2.0 1.5 1.5 1.0 1.0 TJ = 25ºC 0.5 0.5 0.0 0.0 20 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 170 160 t f td(off) - - - - 150 TJ = 125ºC, VGE = 15V 140 VCE = 480V 130 120 110 I C = 80A 100 90 I C = 40A 80 70 60 3 4 5 6 7 8 9 10 11 12 13 14 RG - Ohms 280 260 240 220 200 180 160 140 120 100 80 60 15 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 160 140 t f td(off) - - - - RG = 3Ω , VGE = 15V 120 VCE = 480V I C = 80A 100 130 120 110 100 80 90 I C = 40A 60 80 40 70 20 60 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 5 Page

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