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Teilenummer | AO3407 |
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Beschreibung | 30V P-Channel Enhancement Mode MOSFET | |
Hersteller | JinYu | |
Logo | ||
Gesamt 3 Seiten 30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m Ω
AO3407
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
GS
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.65 2.95
1.50 1.70
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ± 20
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
ID
IDM
PD
5.3
-20
1.4
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
125
Unit
V
A
W
oC
oC/W
JinYu
semiconductor
www.htsemi.com
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ AO3407 Schematic.PDF ] |
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