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DTC114TM3T5G Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer DTC114TM3T5G
Beschreibung Digital Transistors
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 12 Seiten
DTC114TM3T5G Datasheet, Funktion
MUN2215, MMUN2215L,
MUN5215, DTC114TE,
DTC114TM3, NSBC114TF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
6
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
XM 1
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 1
1
Publication Order Number:
DTC114T/D






DTC114TM3T5G Datasheet, Funktion
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
1
IC/IB = 10
TYPICAL CHARACTERISTICS NSBC114TF3
1000
150°C
25°C
25°C
0.1
150°C
55°C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
10
1
50 1
55°C
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
IE = 0 A
TA = 25°C
100
150°C
10
1 25°C
55°C
0.1
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
0.01
VO = 5 V
0.001
50 0 1 2 3 4 5 6 7
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
10
25°C
55°C
1
150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
6

6 Page









DTC114TM3T5G pdf, datenblatt
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
PACKAGE DIMENSIONS
D X
Y
1 3E
2
TOP VIEW
A
SOT1123
CASE 524AA
ISSUE C
c HE
SIDE VIEW
3X L2
e
b
0.08 X Y
2X b1
3X L
BOTTOM VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN MAX
A 0.34 0.40
b 0.15 0.28
b1 0.10 0.20
c 0.07 0.17
D 0.75 0.85
E 0.55 0.65
e 0.35 0.40
HE 0.95 1.05
L 0.185 REF
L2 0.05 0.15
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
1.20
3X 0.34
1
0.26
0.38 2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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12
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For additional information, please contact your local
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DTC114T/D

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