Datenblatt-pdf.com


F8NK85Z Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer F8NK85Z
Beschreibung STF8NK85Z
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 15 Seiten
F8NK85Z Datasheet, Funktion
STP8NK85Z
STF8NK85Z
N-channel 850V - 1.1- 6.7A - TO-220 /TO-220FP
Zener - protected SuperMESH™ Power MOSFET
General features
Type
STP8NK85Z
STF8NK85Z
VDSS
(@Tjmax)
850 V
850 V
RDS(on)
< 1.4
< 1.4
ID
6.7 A
6.7 A
Extremely high dv/dt capability
100% avalange tested
)Gate charge minimized
t(sVery low intrinsic capacitances
ucVery good manufacturing repeatibility
rodDescription
te PThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
lestrip-based PowerMESH™ layout. In addition to
sopushing on-resistance significantly down, special
bcare is taken to ensure a very good dv/dt
Ocapability for the most demanding applications.
-Such series complements ST full range of high
)voltage MOSFETs including revolutionary
t(sMDmesh™ products.
ucApplications
rodSwitching application
TO-220
3
2
1
TO-220FP
Internal schematic diagram
solete POrder codes
Ob Part number
Marking
Package
Packaging
STP8NK85Z
P8NK85Z
TO-220
Tube
STF8NK85Z
F8NK85Z
TO-220FP
Tube
October 2006
Downloaded from Elcodis.com electronic components distributor
Rev 5
1/15
www.st.com
15






F8NK85Z Datasheet, Funktion
Electrical characteristics
STP8NK85Z - STF8NK85Z
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
6.7 A
26.7 A
VSD(2) Forward on voltage
ISD = 6.7 A, VGS = 0
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6.7 A, di/dt = 100
A/µs
VDD = 35 V, Tj = 25°C
(see Figure 20)
530 ns
4.5 µC
17 A
trr Reverse recovery time
ISD = 6.7 A, di/dt = 100
A/µs
690 ns
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 35 V, Tj = 150°C
(see Figure 20)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Obsolete Product(s) - Obsolete Product(s)2. Pulse width limited by safe operating area
6.4 µC
17 A
6/15
Downloaded from Elcodis.com electronic components distributor

6 Page









F8NK85Z pdf, datenblatt
Package mechanical data
STP8NK85Z - STF8NK85Z
TO-220 MECHANICAL DATA
DIM.
MIN.
mm.
TYP
MAX.
MIN.
inch
TYP.
MAX.
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.15
1.70 0.045
0.066
c 0.49
0.70 0.019
0.027
D 15.25
15.75
0.60
0.620
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.052
H1 6.20
6.60 0.244
0.256
)J1 2.40
2.72 0.094
0.107
t(sL 13
14 0.511
0.551
cL1 3.50
3.93 0.137
0.154
uL20 16.40
0.645
dL30 28.90
1.137
roøP 3.75
3.85 0.147
0.151
Obsolete Product(s) - Obsolete PQ 2.65
2.95 0.104
0.116
12/15
Downloaded from Elcodis.com electronic components distributor

12 Page





SeitenGesamt 15 Seiten
PDF Download[ F8NK85Z Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
F8NK85ZSTF8NK85ZSTMicroelectronics
STMicroelectronics

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche