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Teilenummer | STU313D |
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Beschreibung | Dual Enhancement Mode Field Effect Transistor | |
Hersteller | SamHop | |
Logo | ||
Gesamt 11 Seiten STU313D
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
30V 16A
24 @ VGS=10V
35 @ VGS=4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-30V
-15A
33 @ VGS=-10V
52 @ VGS=-4.5V
D1/D2
S1
G1
S2 G2
TO-252-4L
D1 D2
G1 G2
S 1 N-ch
S 2 P-ch
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
N-Channel P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
30 -30
±20 ±20
ID Drain Current-Continuous a
IDM -Pulsed b
TC=25°C
TC=70°C
16 -15
12.5 -11.5
45 -43
I AS
EAS
Sigle Pulse Avalanche Current d
Sigle Pulse Avalanche Energy d
L=0.5mH
7.5 5.0
14 6.3
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
10
6.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
12
60
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,30,2008
www.samhop.com.tw
STU313D
Ver 1.0
15V
VDS
L
DR IVE R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
A
Unclamped Inductive Test Circuit
F igure 13a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 13b.
2
1
D =0 . 5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
S INGLE PULS E
0.0001
0.001
0.01
P DM
t1
t2
1. R įJA (t)=r (t) * R įJA
2. R įJA=S ee Datas heet
3. T J M-T A = P DM* R įJ A (t)
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
10
Jul,30,2008
6 www.samhop.com.tw
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ STU313D Schematic.PDF ] |
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