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Teilenummer | STU307S |
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Beschreibung | P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Hersteller | SamHop Microelectronics | |
Logo | ||
Gesamt 8 Seiten STU/D307SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-53A
9.5 @ VGS=-10V
14 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-30
±20
-53
-42
-160
42
27
-55 to 150
3
50
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
Downloaded from Elcodis.com electronic components distributor
1
Jan,29,2010
www.samhop.com.tw
STU/D307S
PACKAGE OUTLINE DIMENSIONS
TO-251
E
E2
L
D1
E1 D2
D
12 3
H
B2 L2 L1
B1
A
C
Ver 1.0
D3
PB
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
MILLIMETERS
MIN MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
4.900
5.300
6.700
7.300
7.000
8.000
13.700
15.300
6.300
6.700
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
6
A1
INCHES
MIN MAX
0.083
0.098
0.014
0.026
0.016
0.031
0.026
0.041
0.020
0.035
0.016
0.024
0.209
0.224
0.193
0.209
0.264
0.287
0.276
0.315
0.539
0.602
0.248
0.264
0.181
0.193
0.189
0.205
0.051
0.067
0.055
0.071
0.020
0.035
0.091 BSC
Jan,29,2010
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ STU307S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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