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What is H55S5122EFR-60M?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "512Mbit (16Mx32bit) Mobile SDR Memory".


H55S5122EFR-60M Datasheet PDF - Hynix Semiconductor

Part Number H55S5122EFR-60M
Description 512Mbit (16Mx32bit) Mobile SDR Memory
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of
512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 / Sep. 2010
1

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H55S5122EFR-60M equivalent
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122EFR Series / H55S5132EFR Series
FEATURES
Standard SDRAM Protocol
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write
for that bank is performed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
Power Supply Voltage: VDD = 1.8V, VDDQ = 1.8V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Programmable burst length: 1, 2, 4, 8 or full page
Programmable Burst Type: sequential or interleaved
Programmable CAS latency of 3 or 2
Programmable Drive Strength
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
Operation Temperature
- Mobile Temp.: -30oC ~ 85oC
Package Type: 90ball FBGA, 0.8mm pitch, 8 x 13 [mm2], t=1.0mm max, Lead & Halogen Free
512M SDRAM ORDERING INFORMATION
Part Number
H55S5122EFR-60M
H55S5122EFR-75M
H55S5122EFR-A3M
H55S5132EFR-60M
H55S5132EFR-75M
H55S5132EFR-A3M
Clock Frequency
Page
Size
Organization Interface
Package
166MHz
133MHz
105MHz
166MHz
133MHz
105MHz
2KBytes
(Normal)
4banks x 4Mb x 32
1KBytes
(Reduced)
LVCMOS
90 Ball FBGA
Lead & Halogen
Free
Rev 1.2 / Sep. 2010
5


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Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H55S5122EFR-60MThe function is 512Mbit (16Mx32bit) Mobile SDR Memory. Hynix SemiconductorHynix Semiconductor

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