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Teilenummer | AP01L60T-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP01L60T-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
Description
G
D
S
BVDSS
RDS(ON)
ID
600V
12Ω
160mA
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for all commercial-industrial
applications.
G
D
S
TO-92
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TA=100℃
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Rating
600
+30
160
100
300
0.83
-55 to 150
-55 to 150
Units
V
V
mA
mA
mA
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
150
Unit
℃/W
1
200906085
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP01L60T-HF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AP01L60T-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP01L60T-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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