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Teilenummer | AP02N60P-HF |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 4 Seiten Advanced Power
Electronics Corp.
AP02N60P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristics
▼ Simple Drive Requirement
▼ Halogen Free & RoHS Compliant
G
D BVDSS
RDS(ON)
ID
S
600V
8Ω
2A
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC, DC-AC
converters for telecom, industrial and consumer environment.
G
DS
TO-220
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
2
1.26
6
39
0.31
130
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.2
62
Units
℃/W
℃/W
1
201211203
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ AP02N60P-HF Schematic.PDF ] |
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