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AP02N40I-HF Schematic ( PDF Datasheet ) - Advanced Power Electronics

Teilenummer AP02N40I-HF
Beschreibung N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller Advanced Power Electronics
Logo Advanced Power Electronics Logo 




Gesamt 4 Seiten
AP02N40I-HF Datasheet, Funktion
Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP02N40I-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
400V
RDS(ON)
5Ω
G ID 1.6A
S
Description
AP02N40 uses rugged design with the best combination of fast
switching and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
+30
1.6
1
3
27.8
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.5
65
Units
V
V
A
A
A
W
Unit
/W
/W
Data & specifications subject to change without notice
1
201101051





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